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Sic power diode
Asiasemitech | 2024-08-29

  Silicon carbide diode is one of the silicon carbide power devices, SiC silicon carbide diode full name SiC silicon carbide barrier diode, also known as SiC silicon carbide Schottky diode, its basic structure includes heavily doped N-type 4H-SiC sheet, 4H-SiC epitaxial layer, Schochy contact layer and ohmic contact layer. This device has rectification characteristics through the contact barrier formed between the metal and the N-type semiconductor.


  SiC silicon carbide diodes are currently on the market, including SMD SiC silicon carbide diodes and plug-in SiC silicon carbide diodes. The main packages are: plug-in SiC silicon carbide diode packages TO-220-2, TO-247-2, TO-247-3. SMD diodes are available in DFN8×8, TO-252-2L, and TO-263-2L.


  The benefits of SiC diodes include the ability to dramatically improve efficiency and high-temperature reliability, while responding to market demands for lower system execution costs and reduced maintenance requirements. These power devices are suitable for AC-DC, DC-DC, and DC-AC step-down converters, photovoltaic inverters, solar inverters, new energy vehicle chargers, uninterruptible power systems, and industrial motor drive product applications. In addition, silicon carbide diodes are also suitable for circuits in various other electronic products.


  1. Solar inverter

  The basic material of solar power diode, silicon carbide diode, is better than ordinary silicon bipolar technology. SiC diodes transition between the on-and-off state is very fast and does not have the reverse recovery current that occurs when switching with normal bipolar diode technology. By eliminating the reverse recovery current effect, the SiC diode consumes up to 70% less energy, maintaining high efficiency over a wide temperature range and increasing the flexibility of designers to optimize the operating frequency of the system.


  2. New energy vehicle charger

  The silicon carbide diode has passed the automotive-grade product test, and the polarity connection breakdown voltage has been increased to 650V, which can meet the requirements of designers and automakers who want to reduce the voltage compensation coefficient to ensure that there is sufficient safety margin between the nominal voltage and the instantaneous peak voltage of the on-board charging semiconductor components. Diode dual-tube products maximize space utilization and reduce the weight of on-board chargers.


  3. Advantages of switching power supply

  The use of silicon carbide allows for extremely fast switching, high frequency operation, zero recovery and temperature-independent behavior, and together with our low inductance RP package, these diodes can be used in any number of fast switching diode circuits or high frequency converter applications.


  4. Industrial advantages

  Silicon carbide diodes: Heavy-duty motors and industrial equipment are mainly used in converters for high-frequency power supplies, which can bring the advantages of high efficiency, high power and high frequency.